A2T21H141W24SR3 1 rf device data nxp semiconductors rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 36 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the fr equency range of 2110 to 2200 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 400 ma, v gsb =0.65vdc,p out = 36 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 2110 mhz 17.2 50.6 7.3 ?31.9 2140 mhz 17.3 50.1 7.1 ?32.2 2170 mhz 17.3 49.6 7.0 ?33.0 2200 mhz 17.2 48.2 7.0 ?34.1 features ? advanced high performance in--package doherty ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage r ange for improved class c operation ? able to withstand extremely high output vswr and broadband operating conditions ? designed for digital predistorti on error corre ction systems document number: a2t21h141w24s rev. 0, 06/2018 nxp semiconductors technical data 2110?2200 mhz, 36 w avg., 28 v airfast rf power ldmos transistor A2T21H141W24SR3 ni--780s--4l2l 1. pin connections 4 and 5 are dc coupled and rf independent. 2. device can operate with v dd current supplied through pin 3 and pin 6. (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb 6 3 15 24 carrier peaking figure 1. pin connections vbw b (2) vbw a (2) (1) ? 2018 nxp b.v.
2 rf device data nxp semiconductors A2T21H141W24SR3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 76 ? c, 36 w avg., w--cdma, 28 vdc, i dqa = 400 ma, v gsb = 0.65 vdc, 2140 mhz r ? jc 0.44 ? c/w table 3. esd protection characteristics test methodology class human body model (per js--001--2017) 2 charge device model (per js--002--2014) c3 table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a, carrier gate threshold voltage (v ds =10vdc,i d =70 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v dd =28vdc,i da = 400 madc, measured in functional test) v gsa(q) 1.4 1.8 2.2 vdc drain--source on--voltage (v gs =10vdc,i d =0.7adc) v ds(on) 0.1 0.2 0.3 vdc on characteristics -- side b, peaking gate threshold voltage (v ds =10vdc,i d = 100 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =1.0adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 4. side a and side b are tied together for this measurement. (continued)
A2T21H141W24SR3 3 rf device data nxp semiconductors table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in nxp doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 400 ma, v gsb =0.65vdc,p out =36wavg., f = 2110 mhz, single--carrier w--cdma, iq magnitude clippi ng, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 16.4 17.2 19.4 db drain efficiency ? d 47.5 50.6 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.7 7.3 ? db adjacent channel power ratio acpr ? ?31.9 ?27.0 dbc load mismatch (3) (in nxp doherty test fixture, 50 ohm system) i dqa = 400 ma, v gsb = 0.65 vdc, f = 2140 mhz vswr 10:1 at 32 vdc, 170 w cw output power (3 db input overdrive from 114 w cw rated power) no device degradation typical performance (3) (in nxp doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 400 ma, v gsb = 0.65 vdc, 2110?2200 mhz bandwidth p out @ 3 db compression point (4) p3db ? 158 ? w am/pm (maximum value measured at the p3db compression point across the 2110?2200 mhz bandwidth) ? ? ?22 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 160 ? mhz gain flatness in 90 mhz bandwidth @ p out =36wavg. g f ? 0.16 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.008 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.006 ? db/ ? c table 5. ordering information device tape and reel information package A2T21H141W24SR3 r3 suffix = 250 units, 44 mm tape width, 13--inch reel ni--780s--4l2l 1. v dda and v ddb must be tied together and powered by a single dc power supply. 2. part internally matched both on input and output. 3. measurements made with device in an a symmetrical doherty configuration. 4. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data nxp semiconductors A2T21H141W24SR3 aaa--030283 z1 c4 c7 c3 r1 c2 c8 c6 c1 c9 p c a2t21h141w24s rev. 0 d100829 v ddb v dda v ggb v gga c22 c21 c20 c19 c18 c13 c10 r3 c11 r2 c16 c14 c12 c17 c15 c5 cut out area note: v dd a and v ddb must be tied together and powered by a single dc power supply. figure 2. A2T21H141W24SR3 test circuit component layout table 6. A2T21H141W24SR3 test circui t component designations and values part description part number manufacturer c1, c11, c12, c13, c14, c21 10 ? f chip capacitor c5750x7s2a106m230kb tdk c2, c4, c5, c7, c10, c16, c19 10 pf chip capacitor atc600f100jt250xt atc c3 1.6 pf chip capacitor atc600f1r6bt250xt atc c6, c8, c18 0.3 pf chip capacitor atc600f0r3bt250xt atc c9 0.1 pf chip capacitor atc600f0r1bt250xt atc c15 9.1 pf chip capacitor atc600f9r1bt250xt atc c17 0.2 pf chip capacitor atc600f0r2bt250xt atc c20, c22 470 ? f, 63 v electrolytic capacitor mcgpr63v477m13x26 multicomp r1, r2 6.2 ? , 1/4 w chip resistor crcw12066r20fkea vishay r3 50 ? , 10 w termination chip resistor c10a50z4 anaren z1 2000-2300 mhz band, 90 ? , 5 db directional coupler x3c21p1-05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d100829 mtl
A2T21H141W24SR3 5 rf device data nxp semiconductors typical characteristics ? 2110?2200 mhz 2070 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 36 watts avg. 17.7 ?38 53 52 51 50 ?28 ?30 ?32 ?34 ? d , drain efficiency (%) ? d g ps , power gain (db) 17.5 17.3 17.1 2090 2110 2130 2150 2170 2190 2210 2230 49 ?36 acpr (dbc) parc parc (db) ?3 ?2.2 ?2.4 ?2.6 ?3.2 g ps ?2.8 17.8 17.6 17.4 17.2 17 16.9 16.8 input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf v dd =28vdc,p out =36w(avg.),i dqa = 400 ma, v gsb =0.65 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?90 ?30 ?45 ?75 1 100 imd, intermodulatio n distortion (dbc) ?60 im3--l 400 im3--u ?15 im5--l im7--l im5--u im7--u figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) 0 ?2 20 1 ?1 ?3 output compression at 0.01% probability on ccdf (db) 10 30 40 60 10 70 60 50 40 30 20 ? d ? drain efficiency (%) 50 parc acpr (dbc) ?45 ?15 ?20 ?25 ?35 ?30 ?40 17.6 g ps , power gain (db) 17.4 17.2 17 16.8 16.6 16.4 g ps ?4 v dd =28vdc,i dqa = 400 ma, v gsb = 0.65 vdc, f = 2140 mhz ?5 single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf ?1 db = 20 w ?2 db = 29 w ?3 db = 38 w acpr ? d v dd =28vdc,p out = 13 w (pep) i dqa = 400 ma, v gsb =0.65vdc two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz
6 rf device data nxp semiconductors A2T21H141W24SR3 typical characteristics ? 2110?2200 mhz 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?20 ?30 10 22 5 65 55 45 35 25 ? d , drain efficiency (%) g ps , power gain (db) 20 18 10 100 200 15 0 acpr (dbc) 16 14 12 ?10 ?40 ?50 ?60 g ps v dd =28vdc,i dqa = 400 ma, v gsb =0.65vdc single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf 2140 mhz 2110 mhz 2170 mhz 2200 mhz 2110 mhz 2140 mhz 2170 mhz 2200 mhz 2200 mhz 2170 mhz 2140 mhz 2110 mhz acpr figure 7. broadband frequency response 10 22 f, frequency (mhz) 18 16 14 gain (db) 20 12 1800 1900 2000 2100 2200 2300 2400 2500 2600 gain v dd =28vdc p in =0dbm i dqa = 400 ma v gsb =0.65vdc ? d
A2T21H141W24SR3 7 rf device data nxp semiconductors package dimensions
8 rf device data nxp semiconductors A2T21H141W24SR3
A2T21H141W24SR3 9 rf device data nxp semiconductors product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1908: solder reflow attach method for high power rf devices in air cavity packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 june 2018 ? initial release of data sheet
10 rf device data nxp semiconductors A2T21H141W24SR3 information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, repr esentation, or guarantee r egarding the sui tability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo and airfast are trademarks of nxp b.v. all other product or service names are the property of their respective owners. e 2018 nxp b.v. how to reach us: home page: nxp.com web support: nxp.com/support document number: a2t21h141w24s rev. 0, 06/2018
|
